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10 Aug 2009: A new concept has been developed to make nanostruc-tures from strained semiconductors by selectively releasingthe strained layers from the substrates.6–8 The size of thenanostructures can be adjusted down

7 Feb 2009: Dover, New York, 1972. Size effects in the torsion of thin metal wires 8.

19 Nov 2009: New York: Gordon and Breach; 1997. [3] Quintana-Alonso I, Fleck NA.

27 Jul 2009: Appl. Phys. 100. Art. 051614. Bez, R., Pirovano, A., 2004. Non-volatile memory technologies: emerging conceptsand new materials.

10 Aug 2009: laser micromachining New Wave Research, laser machining systemmode PXC. Thicker Ni films were used for beam bending experi-ments so as to avoid large deflection. ... M. Gad-el-Hak, The MEMS Handbook, CRC Press, New York 2001.25. J.

10 Aug 2009: 36. New York (NY): AcademicPress; 1999. p. 82. [7] Swinkels FB, Ashby MF.

30 Jun 2009: between the bulk mean temperature and the same wall temperature, all at the same x -. position). The original two-dimensional problem has been transformed to a new one-. ... With the. introduction of a new dimensionless variable 4. 1. 3Nuζ η= , Eq.

8 Aug 2009: McGraw-Hill, New York. 5. Newmark, N.M. (1949). A Simple Approximate Formula for Effective End-Fixity of Columns, Journal of the Aeronautical Sciences, 16: 116.

27 Jul 2009: This is because the initial yield point in the new theory incorporates a dependence on the higher-orderstresses sijk which need not vanish in the elastic domain. ... Abramowitz, I.A. Stegun, Handbook of Mathematical Functions with Formulas, Graphs, and

10 Jul 2009: Philos. Mag. 42, 868–875.Hill, 1956a. New horizons in the mechanics of solids.