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14 Sep 2016: The recent attempts to harness these properties for new-generation optoelectronic devices, from photodetectors18 to. ... F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. AtomicallyThin MoS2: A New Direct-Gap Semiconductor.

15 Jun 2016: We reduce the symmetry of theMiura-ori to obtain new patterns while preserving the flat-foldability conditionat each node.

1 Aug 2016: silicon photonics has a problem: it needsten times more energy than we can provide. So, if we want this new, improved internet age, newtechnological, powerefficient solutions need to be found. ... able to make fully functioning

2 Sep 2016: M. New J. Phys. 2009, 11 (9), 095011.(37) Lucchese, M. M.; Stavale, F.; Ferreira, E.

14 Sep 2016: By focusing on these simpler elements, new insightinto real and general disclination effects may be garnered,such as the singular properties at real vertices—which are notyet well understood. ... 8] S. P. Timoshenko and J. M. Gere, Theory of Elastic

20 Sep 2016: 11] R. J. Lang, The Complete Book of Origami (Dover, New York,1988).

27 May 2016: M.; Kwok, K. N. Physics of Semiconductor Devices, 3rd ed.;Wiley: New York, 2006.(15) Kang, Y.; et al.

18 Oct 2016: 2Department of Physics, Rice University, Houston TX 77251, USA 3Department of Materials Engineering, New Mexico Tech, Socorro NM 87801, USA.

25 Nov 2016: Opt. Soc. Am., vol. 39, pp. 970–976, 1949. [13] P. Jacquinot, “New developments in interference spectroscopy,” Rep.

11 Apr 2016: the development of new optically controlled memories for light-assisted programming and. ... 11a). The X-raydiffraction patterns of powders prepared from graphene/trans-azobenzene and graphene/cis-azobenzene show new peaksat 2y12.3 (dspacingB0.72 nm) and

18 Oct 2016: M.; Kwok, K. N. Physics of Semiconductor Devices; Wiley:New York, 2006.(20) Bonaccorso, F.; Sun, Z.; Hasan, T.; Ferrari, A. ... F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. AtomicallyThin MoS2: a New Direct-Gap Semiconductor.

1 Jul 2016: Cambridge is very well-placed in the network of UK,European and global initiatives targeting the development of new products anddevices based on graphene and related materials.”. ... innovators). Newsletter SubscriptionStay informed of the latest news

2 Feb 2016: This gives a 400%enhancement of responsivity and a 1000% increase inphotoactive length, combined with tunable spectral selectivity.The interference between surface plasmon polaritons and theincident wave introduces new functionalities, such

18 Oct 2016: new structures will push IPE-based Si PDs to play a key role. ... in the telecommunications, opening new frontiers in the field. of low-cost silicon photonic.

2 Sep 2016: 95] O. Svelto , Principles of Lasers , 4th ed., Plenum , New York, USA 1998. ... C. Decius , P. C. Cross , Molecular Vibrations , Mc Graw Hill , New York, USA 1955.

18 Oct 2016: ABSTRACT In this work we present a flexible Electrostatic Tactile (ET) surface/display realized by using new emerging material graphene. ... new generation of passive as well as interactive devices with flexible form factors (morphing' and shape change

18 Oct 2016: successfullyfabricated for the first time in theworld . read more . New Window IntoQuantum PhysicsOpened WithSuperconductivity in. LEDsMar. ... Us. Keep up to date with the latest news fromScienceDaily via social networks:.

18 Oct 2016: Taking advantages by both new structures and new two-dimensional emerging materials a progressive increase in device performance has been demonstrated along the last years. ... to play a key role in the telecommunications, opening new frontiers in the