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20 Aug 2008: Figure 7. Effective core diameter distribution of as-grown (black),implanted (red) and annealed (green) SiNWs for (a) P-implantationand (b) B-implantation. ... E. Phys. ReV. B 1973, 7, 3685.(29) (a) Li, B. B.; Yu, D.

3 May 2011: For simplicity, Table 1 and Fig. 1(b) only include NBE. Nano Res. ... b b 2DAP G D A 0 DAe / 4πE E E E A Rεε= (1).

7 Apr 2020: Awschalom, R. Hanson, J. Wrachtrup, and B. B. Zhou, Nat. Photonics 12, 516 (2018).[4] W. ... 13] C. Hepp, T. Müller, V. Waselowski, J. N. Becker, B.Pingault, H.

30 Mar 2023: i.e., B in hBN[168] and S in MoS2[170]), without metal penetration. ... a,b) Reproduced with permission.[163] Copyright 2021, Wiley-VCH. 15214095, 2023, 9, Dow.

27 May 2008: visual inspection even after 6 months of incubation. r 2007 Elsevier B.V. ... Yin, M.S. Ünlü, B.B. Goldberg,. A.K. Swan, S.B. Cronin, Nano Lett.

12 Feb 2007: 20 300 M y. OPTICAL PHONONS IN CARBON NANOTUBES: KOHN… PHYSICAL REVIEW B 75, 035427 2007. ... PHYSICAL REVIEW B 75, 035427 2007. 035427-10. with experiments, the data in Fig.

3 Oct 2018: Figure 2a, b shows the schematicand the optical image of the device, respectively. ... and D.D. fabricated andcharacterised the devices; M.B., A.R.-P.M., D.M.K., C.P.-B., B.P.

28 Nov 2006: Robertson , S. Muhla, b b a. Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-360, Coyoacan D.F. ... Robertson, Phys. Rev. B, submittedfor publication. w24x (a) S.E. Rodil, N.A.

15 Oct 2010: b) Preultracentrifugation. (c) Extractionof the supernatant fractions. (d) Formation of step gradient by placing four layers with decreasing Optiprep concentration on top of each other.37,39. ... a) SDC, (b) TDC, (c) SC, (d) SDBS,(e) Pluronic F98, and (f)

7 Apr 2020: b) Optical image of contact pad short to connect both GPDs in series. ... e)Photovoltage map of device B at the end of the SPP waveguide.

2 Apr 2013: a) SWNT bundle, (b) absorption spectra of SWNTs dispersed in water with sodium docecylbenzenesulfonatesurfactant. ... N.; Yin, Y.;Cronin, S. B.; Unlu, M. S.; Goldberg,B. B.; Swan, A.

27 Nov 2013: TheFIG. 1. (a) Waveguide layout and dicing location. (b) The principle of evan-. ... Swan,. M. S. Unlu, B. B. Goldberg, M. A. Pimenta, J.

4 Dec 2017: Fig. S4(b) plots the spectra in the G region of SWNT-1. ... 36] Jorio A, Souza A G, Dresselhaus G, Dresselhaus M S, Swan A K, Unlu M S, Goldberg B B, Pimenta M A, Hafner J H, Lieber C M and Saito

20 Oct 2009: Polystyrene-block-polyacrilic acid(PS-b-PAA) forms micelles around SWNTs due to the gradualaddition of water. ... Figure 4a and b schematically describeEET from a donor to an acceptor SWNT.

14 Sep 2016: The layout of d-cone fold lines is repeated in Fig. 4(c)with facet labels A to D counterclockwise, and fold rotationsmoving from A to B, B to C, and ... β β. c. d. o,a,b. b. =. FIG. 7. d-cone properties from fundamental units.

27 Nov 2006: Gradowski , D. Schneider , H. Hilgersa a, a b b c b. ... 75(1999) 1077. w17x W.P. Acker, B. Yip, Dh. Leach, et al., J.

19 Feb 2016: sinh. cosh cosh. 2B. F. B B. ( ) ( ). where ò is the characteristic electron energy (of the. order of Fermi energy or temperature). ... strateand b b d2( ),where b is thewidthof the. centralconductorand d is thewidthofthegapbetween.

14 Feb 2014: tion, the other without. Figs 3(a) and 3(b) show that the. ... 3. (a) and (b) Source-drain cur-. rent (ISD) measured as a function of VGin (a) sample A and (b) B, while keep-.

5 May 2011: Noise from B: The percentage of dissatisfied of noise level is evaluated by the subjects in Balazova. ... The relationship between PMV and performance in Roelofsen [8] is:. 2 3 4 5 60 1 2 3 4 5 6P b b PMV b PMV b PMV b PMV b

22 Jun 2010: Tensegrity B (b.i and b.ii) for varying valuesof ε = t/AE. ... Pugh, A. (1976). Introduction to Tensegrity. University of California Press.,Berkeley. Roth, B.

6 Feb 2014: 6b. Hences(b, b) = 12(b2 b2)/6b = 4b = 4c. For counting strands in class III, another useful observation is that for any pairb = kb0 and c = kc0 with k an ... If the vertex count of a prime octahedrite is inflated by a factor(b2 c2), where {b, c} = {b, 0}

6 Feb 2014: also sufficient for GðpÞ to be isostatic: b 2j 3 andfor any non-empty set of bars B; b 6 2j 3 and. ... to be isostatic: b 2j 3 and for any non-emptyset of bars B; b 6 2j 3 and.

5 Jun 2014: b) Second harmonic generation autocorrelation trace of mode-locked pulses at 2 μm. ... N.; Yin, Y.; Unlü, M. S.; Gold-berg, B. B.; Swan, A.

20 Sep 2016: C. ββ. D. BA. 2α. β β. FF. CD. A B0,a,b. ... φA. φA. θA. γ. β β. γ A. A′. B′ B′A′.

21 Sep 2021: We start from the B-LM symmetryproperties to derive a general tensorial expression for theinterlayer force constants. ... To illustrate this, Figure2a and Figure 2b show two fictitious crystals with the same B-.

1 Mar 2021: devices, as in Figure 5a,b, defined by EBL, reactive-ion etchingand thermal evaporation of metallic contacts. ... b) SLG patterning using EBL and RIE. (c) Ni/Au contactsdeposition using evaporation and lift-off.

13 Aug 2011: A.C. Ferrari (B)Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UKe-mail: acf26@eng.cam.ac.uk. ... Polystyrene-block-polyacrilic acid (PS-b-PAA) formsmicelles around individual SWNTs by gradual addition of water.

3 Feb 2014: The device is therefore proposed for high-displacement, quasi-static applications. 2006 Elsevier B.V. ... δ. Q. ]=[. A B. B C. ][F. V. ], (8).

11 Nov 2013: Nano Lett. 2012, 12, 1176–1183. 6. Heller, D. A.; Jin, H.; Martinez, B. ... Nat.Nanotechnol. 2009, 4, 114–120. 7. Aili, D.; Gryko, P.; Sepulveda, B.; Dick, J.

20 Jun 2017: The electric field in (b–g) is always applied between top and bottom layers. ... b) Typical RS behaviour for the same devices but using optimal testing conditions.

6 Feb 2014: E r C2 Cn>2(/). C(b) b br b2 bnC0 1 1 1 1. ... 3) for body-bar framewor. E r i. C(b) b br bcC0 1 1 1.

8 Jan 2008: Dimensionless. U ZU$12ð1Kn2=bÞa3=Ept5bx, y, z orthogonal coordinates within plate; z is normal to the middle surfacea dimensionless torsional rigidity equal to 2r(1Kn2/b)b, r modular ratios, equal ... sx ZE. ð1Kn2=bÞ ex Cney; sy ZEb. ð1Kn2=bÞ ey

3 Feb 2014: b) The quadrants from (a) are now reconnected but without changingthe corrugation strain. ... ax = a(1 e)(x b) b = ex1 e , (2.6).

16 Dec 2021: Wrachtrup, and B. B.Zhou, Quantum Technologies with Optically InterfacedSolid-State Spins, Nat. ... Com-mun. 7, 13512 (2016). [26] B. B. Zhou, P. C. Jerger, V.

3 Aug 2017: BB. B. B. B 2. B, B ,. iWL. 2. ( ). ( ). (2). where:. ( ) ( ) ( / / )ψ= F z z zln 1 2 1. ... For the data in figure 4(a) (3LG), the Berry phase. is π and ( ) ( / ) ( /( ))δ π= ϕ ϕ e h FB, B , B 4 B B B2.

10 Mar 2015: B B. Audolyaudoly@lmm.jussieu.fr. K.A. Seffenkas14@cam.ac.uk. 1 UMR 7190 Institut Jean Le Rond d’Alembert, Sorbonne Universités, UPMC Univ Paris 06, CNRS,75005 Paris, France. ... d0i (S), (13b). R(S, t) = 0 [B. (ω01. )2] R̂(S) ei τ , (13c).

26 Jul 2010: a rb1 2. v v- =-. ,f ar b b. the load duration t. ... model uncertainties and dimensional variationsσar,b apparent residual stress ( 11MPa for annealed glass;.

4 Aug 2021: 2019, 14, 35.[7] B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. ... Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, W. Lu, Nano Lett.

25 Jul 2023: quantum dot. Phys. Rev. B 63, 161305 (2001).2. Kroutvar, M. et al. ... 142. Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. &

9 May 2012: stan. ce (Ω. /sq. )1. CNT length (μm). (b). Figure 5: Opto-electronic performance. ... 6, no. 4, pp.677–682, 2006. [9] B. B. Parekh, G. Fanchini, G.

21 Jan 2009: E.; Avouris, P. Phys. ReV. B 1998, 58, 13870.(6) O’Connell, M. ... G.; Vamivakas, A. N.; Yin, Y.; Ünlü, M. S.; Goldberg,B. B.; Swan, A.

29 Mar 2011: B A BA B B A. =. ( )( ) 0. ... Average. P55IMHM. P25MPP [25]. Group A [4]Group B [4]Group C [4].

14 May 2019: 3. (b). (c). Si3N4SiO2. SiO2. Si3N4. Ni/Au. SLG. SLG. Cr/Au. Si. ... Conductivity (. mS. ). VGate. (V). (b). p-p n-p. n-np-n. (a).

1 Jun 2009: Po. s(2. D). (cm. -1). Strain(%). B. ω2D/ε - 64cm-1/%. FIG. ... K. Swan, M. S. Unlu, B. B. Goldberg, M. A. Pimenta, J.