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  2. acs_nn_nn-2013-00758r 1..7

    www-g.eng.cam.ac.uk/nms/publications/pdf/nn400758r.pdf
    2 Apr 2013: a) SWNT bundle, (b) absorption spectra of SWNTs dispersed in water with sodium docecylbenzenesulfonatesurfactant. ... N.; Yin, Y.;Cronin, S. B.; Unlu, M. S.; Goldberg,B. B.; Swan, A.
  3. Evanescent-wave coupled right angled buried waveguide: Applicationsin …

    www-g.eng.cam.ac.uk/nms/publications/pdf/14834360.pdf
    27 Nov 2013: TheFIG. 1. (a) Waveguide layout and dicing location. (b) The principle of evan-. ... Swan,. M. S. Unlu, B. B. Goldberg, M. A. Pimenta, J.
  4. Spider silk reinforced by graphene and carbon nanotubes-Supplementary …

    www-g.eng.cam.ac.uk/nms/publications/pdf/SILepore.pdf
    4 Dec 2017: Fig. S4(b) plots the spectra in the G region of SWNT-1. ... 36] Jorio A, Souza A G, Dresselhaus G, Dresselhaus M S, Swan A K, Unlu M S, Goldberg B B, Pimenta M A, Hafner J H, Lieber C M and Saito
  5. Nanotube-Polymer Composites for Ultrafast Photonics

    www-g.eng.cam.ac.uk/nms/publications/pdf/hasan_ADVMAT09.pdf
    20 Oct 2009: Polystyrene-block-polyacrilic acid(PS-b-PAA) forms micelles around SWNTs due to the gradualaddition of water. ... Figure 4a and b schematically describeEET from a donor to an acceptor SWNT.
  6. PHYSICAL REVIEW E 94, 013002 (2016) Fundamental conical defects: ...

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2016PREA.pdf
    14 Sep 2016: The layout of d-cone fold lines is repeated in Fig. 4(c)with facet labels A to D counterclockwise, and fold rotationsmoving from A to B, B to C, and ... β β. c. d. o,a,b. b. =. FIG. 7. d-cone properties from fundamental units.
  7. doi:10.1016/j.diamond.2003.12.018

    www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_DRM2004b.pdf
    27 Nov 2006: Gradowski , D. Schneider , H. Hilgersa a, a b b c b. ... 75(1999) 1077. w17x W.P. Acker, B. Yip, Dh. Leach, et al., J.
  8. 2DMater.3(2016)015010

    www-g.eng.cam.ac.uk/nms/publications/pdf/2DMater.3(2016)015010.pdf
    19 Feb 2016: sinh. cosh cosh. 2B. F. B B. ( ) ( ). where ò is the characteristic electron energy (of the. order of Fermi energy or temperature). ... strateand b b d2( ),where b is thewidthof the. centralconductorand d is thewidthofthegapbetween.
  9. High performance bilayer-graphene terahertz detectors Davide…

    www-g.eng.cam.ac.uk/nms/publications/pdf/spirito_APL_2014.pdf
    14 Feb 2014: tion, the other without. Figs 3(a) and 3(b) show that the. ... 3. (a) and (b) Source-drain cur-. rent (ISD) measured as a function of VGin (a) sample A and (b) B, while keep-.
  10. Cover

    www-g.eng.cam.ac.uk/gft/media/PG%20projects/Qian%27s%20publication/Report%20TR.235.pdf
    5 May 2011: Noise from B: The percentage of dissatisfied of noise level is evaluated by the subjects in Balazova. ... The relationship between PMV and performance in Roelofsen [8] is:. 2 3 4 5 60 1 2 3 4 5 6P b b PMV b PMV b PMV b PMV b
  11. The Stiffness of Tensegrity Structures S.D. GuestDepartment of…

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/guest2011b.pdf
    22 Jun 2010: Tensegrity B (b.i and b.ii) for varying valuesof ε = t/AE. ... Pugh, A. (1976). Introduction to Tensegrity. University of California Press.,Berkeley. Roth, B.
  12. 18 April 2012 first published online, doi: 10.1098/rspa.2012.0116468…

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2012GuestB.pdf
    6 Feb 2014: 6b. Hences(b, b) = 12(b2 b2)/6b = 4b = 4c. For counting strands in class III, another useful observation is that for any pairb = kb0 and c = kc0 with k an ... If the vertex count of a prime octahedrite is inflated by a factor(b2 c2), where {b, c} = {b, 0}
  13. When is a symmetric pin-jointed framework isostatic?

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009GuestB.pdf
    6 Feb 2014: also sufficient for GðpÞ to be isostatic: b 2j 3 andfor any non-empty set of bars B; b 6 2j 3 and. ... to be isostatic: b 2j 3 and for any non-emptyset of bars B; b 6 2j 3 and.
  14. acs_nn_nn-2014-00767b 1..12

    www-g.eng.cam.ac.uk/nms/publications/pdf/nn500767b.pdf
    5 Jun 2014: b) Second harmonic generation autocorrelation trace of mode-locked pulses at 2 μm. ... N.; Yin, Y.; Unlü, M. S.; Gold-berg, B. B.; Swan, A.
  15. PHYSICAL REVIEW E 94, 033003 (2016) k-cones and kirigami ...

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2016PREB.pdf
    20 Sep 2016: C. ββ. D. BA. 2α. β β. FF. CD. A B0,a,b. ... φA. φA. θA. γ. β β. γ A. A′. BB′A′.
  16. Shear and Breathing Modes of Layered Materials

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Pizzi.pdf
    21 Sep 2021: We start from the B-LM symmetryproperties to derive a general tensorial expression for theinterlayer force constants. ... To illustrate this, Figure2a and Figure 2b show two fictitious crystals with the same B-.
  17. Wafer-Scale Integration of Graphene-Based Photonic Devices

    www-g.eng.cam.ac.uk/nms/publications/pdf/412_ACSnano.pdf
    1 Mar 2021: devices, as in Figure 5a,b, defined by EBL, reactive-ion etchingand thermal evaporation of metallic contacts. ... b) SLG patterning using EBL and RIE. (c) Ni/Au contactsdeposition using evaporation and lift-off.
  18. Chapter 9Nanotube and Graphene Polymer Compositesfor Photonics and…

    www-g.eng.cam.ac.uk/nms/publications/pdf/hasan_bookchapter.pdf
    13 Aug 2011: A.C. Ferrari (B)Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UKe-mail: acf26@eng.cam.ac.uk. ... Polystyrene-block-polyacrilic acid (PS-b-PAA) formsmicelles around individual SWNTs by gradual addition of water.
  19. doi:10.1016/j.sna.2006.04.016

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2007SensAct.pdf
    3 Feb 2014: The device is therefore proposed for high-displacement, quasi-static applications. 2006 Elsevier B.V. ... δ. Q. ]=[. A B. B C. ][F. V. ], (8).
  20. acs_nn_nn-2013-03323k 1..13

    www-g.eng.cam.ac.uk/nms/publications/pdf/nn403323k.pdf
    11 Nov 2013: Nano Lett. 2012, 12, 1176–1183. 6. Heller, D. A.; Jin, H.; Martinez, B. ... Nat.Nanotechnol. 2009, 4, 114–120. 7. Aili, D.; Gryko, P.; Sepulveda, B.; Dick, J.
  21. Graphene and Related Materials for Resistive Random Access Memories

    www-g.eng.cam.ac.uk/nms/publications/pdf/Hui.pdf
    20 Jun 2017: The electric field in (b–g) is always applied between top and bottom layers. ... b) Typical RS behaviour for the same devices but using optimal testing conditions.
  22. When is a symmetric body-bar structure isostatic?

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2010GuestA.pdf
    6 Feb 2014: E r C2 Cn>2(/). C(b) b br b2 bnC0 1 1 1 1. ... 3) for body-bar framewor. E r i. C(b) b br bcC0 1 1 1.
  23. doi:10.1098/rspa.2006.1750

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/seffen2007b.pdf
    8 Jan 2008: Dimensionless. U ZU$12ð1Kn2=bÞa3=Ept5bx, y, z orthogonal coordinates within plate; z is normal to the middle surfacea dimensionless torsional rigidity equal to 2r(1Kn2/b)b, r modular ratios, equal ... sx ZE. ð1Kn2=bÞ ex Cney; sy ZEb. ð1Kn2=bÞ ey
  24. Quantum Control of the Tin-Vacancy Spin Qubit in Diamond

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Debroux.pdf
    16 Dec 2021: Wrachtrup, and B. B.Zhou, Quantum Technologies with Optically InterfacedSolid-State Spins, Nat. ... Com-mun. 7, 13512 (2016). [26] B. B. Zhou, P. C. Jerger, V.
  25. March 2012, published 19, doi: 10.1098/rsta.2011.0347370 2012 Phil.…

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2012PTRSL.pdf
    3 Feb 2014: b) The quadrants from (a) are now reconnected but without changingthe corrugation strain. ... ax = a(1 e)(x b) b = ex1 e , (2.6).
  26. Weak localization in electric-double-layer gated few-layer graphene

    www-g.eng.cam.ac.uk/nms/publications/pdf/Gonnelli_2017_2D_Mater._4_035006.pdf
    3 Aug 2017: BB. B. B. B 2. B, B ,. iWL. 2. ( ). ( ). (2). where:. ( ) ( ) ( / / )ψ= F z z zln 1 2 1. ... For the data in figure 4(a) (3LG), the Berry phase. is π and ( ) ( / ) ( /( ))δ π= ϕ ϕ e h FB, B , B 4 B B B2.
  27. J ElastDOI 10.1007/s10659-015-9520-y Buckling of Naturally Curved…

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2015JE.pdf
    10 Mar 2015: B B. Audolyaudoly@lmm.jussieu.fr. K.A. Seffenkas14@cam.ac.uk. 1 UMR 7190 Institut Jean Le Rond d’Alembert, Sorbonne Universités, UPMC Univ Paris 06, CNRS,75005 Paris, France. ... d0i (S), (13b). R(S, t) = 0 [B. (ω01. )2] R̂(S) ei τ , (13c).
  28. SE14 paper Dev of design methods of glass structures:Layout 3

    www-g.eng.cam.ac.uk/gft/media/PG%20projects/Mauro%27s%20publication/SE14%20paper%20%20Dev%20of%20design%20methods%20of%20glass%20structures.pdf
    26 Jul 2010: a rb1 2. v v- =-. ,f ar b b. the load duration t. ... model uncertainties and dimensional variationsσar,b apparent residual stress ( 11MPa for annealed glass;.
  29. In Situ Observation of Low‐Power Nano‐Synaptic Response in Graphene…

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Huitemp.pdf
    4 Aug 2021: 2019, 14, 35.[7] B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. ... Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, W. Lu, Nano Lett.
  30. nature nanotechnology…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Montblanch_2023SI.pdf
    25 Jul 2023: quantum dot. Phys. Rev. B 63, 161305 (2001).2. Kroutvar, M. et al. ... 142. Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. &
  31. Hindawi Publishing CorporationJournal of NanomaterialsVolume 2012,…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Cole_JNanoMater2012.pdf
    9 May 2012: stan. ce (Ω. /sq. )1. CNT length (μm). (b). Figure 5: Opto-electronic performance. ... 6, no. 4, pp.677–682, 2006. [9] B. B. Parekh, G. Fanchini, G.
  32. Hasan_JPCC2008

    www-g.eng.cam.ac.uk/nms/publications/pdf/Hasan_JPCC2008.pdf
    21 Jan 2009: E.; Avouris, P. Phys. ReV. B 1998, 58, 13870.(6) O’Connell, M. ... G.; Vamivakas, A. N.; Yin, Y.; Ünlü, M. S.; Goldberg,B. B.; Swan, A.
  33. Development of a universal stress sensor for graphene and carbon…

    www-g.eng.cam.ac.uk/nms/publications/pdf/NatComm_2011.pdf
    29 Mar 2011: B A BA B B A. =. ( )( ) 0. ... Average. P55IMHM. P25MPP [25]. Group A [4]Group B [4]Group C [4].
  34. arX iv:1 905. 0463 9v1 [ph ysic s.ap p-ph ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Muench2019.pdf
    14 May 2019: 3. (b). (c). Si3N4SiO2. SiO2. Si3N4. Ni/Au. SLG. SLG. Cr/Au. Si. ... Conductivity (. mS. ). VGate. (V). (b). p-p n-p. n-np-n. (a).
  35. Uniaxial strain in graphene by Raman spectroscopy: G peak ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Mohiuddin_PRB_2009.pdf
    1 Jun 2009: Po. s(2. D). (cm. -1). Strain(%). B. ω2D/ε - 64cm-1/%. FIG. ... K. Swan, M. S. Unlu, B. B. Goldberg, M. A. Pimenta, J.

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