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© 2021 Wiley-VCH GmbH Supporting Information for Small, DOI: ...
www-g.eng.cam.ac.uk/nms/publications/pdf/426_Supp.pdf9 Jun 2021: Au/WS2/P ZT/Au 24.3 3.5 0 µA / 0 µW 0.15 µA / 0.53 µW 10 S36. -
Covalently interconnected transition metal dichalcogenide networks…
www-g.eng.cam.ac.uk/nms/publications/pdf/419_SamoriNEW.pdf26 Apr 2021: Chem. Soc. Rev. 44, 7715–7736 (2015). 24. Sim, D. M. et al. ... 24, 6524–6531 (2014). 41. Li, S.-L., Tsukagoshi, K., Orgiu, E. & Samorì, P. -
High-responsivity graphene photodetectors integrated on silicon…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Schuler.pdf18 Jun 2021: Sel. Top. Quantum Electron. 24, 1–12 (2018).16. Nagarajan, R. et al. ... Nat. Photonics 7, 883–887 (2013).24. Wang, X., Cheng, Z., Xu, K., Tsang, H. -
Shear and Breathing Modes of Layered Materials
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Pizzi.pdf21 Sep 2021: m m m m m m m m24 7 (P11a) m 1 m 1 or m Equivalent Hall numbers: 22 (P1n1) 21, 25 (P11n) 24, 26 (P11b) 24, 27 (Pb11) 23, ... 222 / 2 or 222 / 124 24 (I212121) 222 2 / 222 / 2 or 222 / 125 25 (Pmm2) mm2 mm2 mm2 mm2 mm2 mm2 mm2 mm2126 25 (P2mm) mm2 m mm2 m -
Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021NanoLett.pdf27 Apr 2021: Dint(μ) = ωμ ω0 μD1 = D2μ2/2 D3μ3/6 D4μ4/24. , is shown in Figure 3b, top. ... Nano Lett.2014, 14, 62316236.(24) Robert, C.; Picard, R.; Lagarde, D.; Wang, G.; Echeverry, J. -
Supplementary information for Confinement of long-lived interlayer…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch_supp.pdf16 Jun 2021: S12), from which we extract τs =24.24.0 ns and τl =3.530.09 µs (red), τs =104.6 2.7ns. ... This is in agreement with. Refs. [24, 25]. We extract and show in Supplementary Fig. -
Confinement of long-lived interlayer excitons in WS2/WSe2…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch.pdf16 Jun 2021: ount. s). 0. 6. 12. 18. 24. x20. x4. x1. Fig. ... Nat. Mater. 13, 247–252 (2013). 24. Byrnes, T. et al. Exciton-polariton condensates. -
Optoelectronic mixing with high-frequency graphene transistors
www-g.eng.cam.ac.uk/nms/publications/pdf/2021montanaro.pdf9 Jun 2021: Graphene-basedoptoelectronic devices are compatible with Si platforms16,24–27.Therefore, graphene-based OEMs could combine telecomoperation and CMOS compatibility. ... 24. Pospischil, A. et al. CMOS-compatible graphene photodetector covering alloptical -
In Situ Observation of Low‐Power Nano‐Synaptic Response in Graphene…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Huitemp.pdf4 Aug 2021: Second, GO can be prepared inexpensively via LPE. Spray-coating allows conformal coverage surfaces with complex shapes.[24] This approach is very attrac-tive from an industrial point of view. ... Park, M.-J. Park, J.-S. Lee, Adv. Funct. Mater. 2018, 28, -
Graphene overcoats for ultra-high storage density magnetic media
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Dwivedi.pdf9 Jun 2021: We perform Raman mea-surements at 785 nm, the available Raman wavelength closest tothat used in HAMR (830 nm25,55), with a spot size 1.24 μm, asdetermined by the razor ... 75 on a 0.24 cm2. area, is investigated using an electrochemical corrosionmethod51
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