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26 Jun 2009: This ensures that RW RC ROX, no matter if conduction is via holes or elec-trons.24 Statistically, we note that our SiO2 gate dielec-tric can exhibit two different responses. ... Silicon-Nanowire Transistors withIntruded Nickel-Silicide Contacts. Nano Lett

15 Oct 2009: This is the Case in graphene, graphite and nanotubes, where γan is much smallerthan γEP [12].The EPC contribution to γqη is given by the Fermi golden rule [24]:. ... 94, 015503 (2005)24. P.B. Allen, Phys. Rev. B 6, 2577 (1972); P.B.

9 Mar 2009: d2sb =. 4λψ2δ5tD3. π2n. (EmEs. )(24). and hence the mass msb of the offset struts to provide adequate resistance against buckling is.

15 Oct 2009: Fin-deisenet al.24 combined neutron and x-ray reflectivity to determine both the density and the H content of hydrogenaamorphous carbon (a-C:H) films.

1 Jun 2009: Opt. Lett. 2006, 31,915–917. 24. Rozhin, A. G.; Sakakibara, Y.; Namiki, S.; Tokumoto, M.;Kataura, H.; Achiba, Y.

1 Feb 2009: Y. S. Li, N. R. Tao, K. Lu, Acta Mater. 56, 230 (2008).24. ... state by annealing (we used 450C in Ar atmo-sphere for 24 hours; higher annealing T dam-aged graphene).

30 Oct 2009: stress transfer[24] and the fracture processes in unidirec-. tional,[25] but also multidirectional,[26] composites. ... H. Hong, Nature 2009, 457, 706.[24] N. Melanitis, C. Galiotis, Proc.

15 Oct 2009: Carbon nanotubes are alsochanically and chemically robust and can emit large currdensities at low electric fields.24 The ability to grow carbonnanotubes on conducting substrates over a large area isential for

13 Oct 2009: ESDU[11], [12]. ASCE[13]. AS/NZS[14]. FullScale. CFD. Basic wind speed1 (m/s). 26.74 24 26.74 39.13 39.13 26.742 26.742.

20 Oct 2009: in order to induce a change inmaterial absorption or refractive index.[21–24] Each method hasits disadvantages. ... 1/e.[24] In general, for SAs, a high change in transmission isdesired between low and high power irradiation.[24] For SAs, a low.