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Nanophotonics
www-g.eng.cam.ac.uk/nms/publications/pdf/414.pdf7 Jan 2021: Such antenna geometries arewidely used in THz optoelectronics [2, 4, 24, 31] and bothenable broadband operation [2, 32]. ... drain (d) edge-electrodes based on a coplanar strip-line (CPS) geometry [24], Figure 1B. -
Terahertz Frequency Combs Exploiting an On-Chip, Solution-Processed,…
www-g.eng.cam.ac.uk/nms/publications/pdf/405_new.pdf7 Jan 2021: This would allow THzQCL FCSs to be fully stabilized against primary frequencystandards.24. ... a multiheterodyne detectionscheme, in which the QCL-comb was mixed with a fullystabilized optically rectified THz-frequency comb.24. -
HBN-Encapsulated, Graphene-based, Room-temperature Terahertz…
www-g.eng.cam.ac.uk/nms/publications/pdf/397.pdf7 Jan 2021: For these, the dominant detectionmechanism can be tailored by design.21 Their ultrafastdynamics22 and the ease of fabrication23,24 and integration25. ... C. Production and processing of graphene and 2dcrystals. Mater. Today 2012, 15, 564589.(24) Ferrari, -
Efficient phonon cascades in WSe2 monolayers
www-g.eng.cam.ac.uk/nms/publications/pdf/415_natcomm.pdf25 Jan 2021: J. Phys. Condens. Matter 23, 334205 (2011). 24. Ursaki, V. et al. -
Graphene-Based Interconnects for Stable Dye-Sensitized Solar Modules
www-g.eng.cam.ac.uk/nms/publications/pdf/414_ACS.pdf26 Jan 2021: 23,24 and subsequently transferredto fluorine-doped Tin Oxide (FTO), the most common. ... in condition to react to lightby the mediation of a light-absorbing molecule, i.e., the dye)21,24. -
Weak Distance Dependence of Hot-Electron-Transfer Rates at the…
www-g.eng.cam.ac.uk/nms/publications/pdf/412_pub.pdf27 Jan 2021: photoexcitation.16,17 As a result of theseproperties, along with the ability to fabricate TMDs onwafer-scale,3,1820 these have found applications in photo-detectors,2123 photovoltaics,24 ... Progress, Challenges,and Opportunities for 2D Material Based -
Articleshttps://doi.org/10.1038/s41565-018-0145-8 Broadband,…
www-g.eng.cam.ac.uk/nms/publications/pdf/370_SI.pdf8 Feb 2021: σ̄(3)xxxx(ω, EF , 0) =17G(2|EF |, ω+) 64G(2|EF |, 2ω+)|. 24(ω+)4. ... 45G(2|EF |, 3ω+). 24(ω+)4(S1). 1. Supplementary Fig. 1. THG power dependence. -
Exciton–phonon coupling strength in single-layer MoSe2 at room…
www-g.eng.cam.ac.uk/nms/publications/pdf/419.pdf15 Feb 2021: 61. calculated S for LO phonons as a function of the polarizationparameter for 1L-MoSe2, finding 1.93–2.24. ... B 56, 1077–1080 (1997). 24. Scarpelli, L. et al. Resonantly excited exciton dynamics in two-dimensionalMoSe2 monolayers. -
Covalently interconnected transition metal dichalcogenide networks…
www-g.eng.cam.ac.uk/nms/publications/pdf/419_Samori_SI.pdf1 Mar 2021: emission25 (Supplementary Fig. 24), where ln(I/T2) is linear with E1/2, as for:. ... Science. 356, 69–73 (2017). 24. Shu, J. et al. The intrinsic origin of hysteresis in MoS2 field effect transistors. -
Wafer-Scale Integration of Graphene-Based Photonic Devices
www-g.eng.cam.ac.uk/nms/publications/pdf/412_ACSnano.pdf1 Mar 2021: 24 Siliconphotonics (SiPh) modulators for 30 Gbaud applications haveIL 23 dB higher than InP- and LiNbO3-basedmodulators,25 because of the free carrier effect,26 requiringdevice lengths in the mm scale. ... copy. We collect 8909 spectra on 48 crystals
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