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7 Jan 2021: Figure 4A and B shows the time traces of samples Aand B, recorded at zero gate bias with an oscilloscopehaving a temporal resolution 200 ps. ... The latter signal is then pre-amplified witha voltage pre-amplifier (FEMTO, input impedance 1 MΩ, gain 40

7 Jan 2021: d 200 μm, unlike what experimentally observed in the caseof a dispersion compensated GTI THz QCL comb,23 achievedby coupling a metal mirror.In the latter case, a narrow (3 kHz)

7 Jan 2021: HBN-Encapsulated, Graphene-based, Room-temperature TerahertzReceivers, with High Speed and Low NoiseLeonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, and Miriam S. Vitiello. Cite This: Nano Lett. 2020, 20, 31693177 Read Online.

25 Jan 2021: b–d 532 nm Hot PL spectra of 1L-WSe2 at b 78 K, c 200 K, d 250 K. ... respectively. Thehot PL peaks are seen at 200 K, Fig. 2c, and a further increase inintensity is observed at 250 K, Fig.

26 Jan 2021: This, in principle, could impact thecurrent. However, the graphene surface in contact with theelectrolyte is very small, with a ratio between the twosurfaces1/200.

27 Jan 2021: conduction band in the probe window, consistentwith previously observed sub-200 fs hot-electron transfer fromAu nanoantennae to 1L-MoS2.

8 Feb 2021: 9. ω0 dependence of Te in photoexcited SLG.Te as a function of ω0 for EF =200meV and τ=100 (black), 200 (blue), and300fs (red).

15 Feb 2021: We investigate mechanically exfoliated 1L-MoSe2 on a 200-μmfused silica substrate (see Methods for details). ... This is performed with polydimethylsiloxane(PDMS) and, after inspection under an optical microscope, 1L-MoSe2 is drytransferred in ambient

1 Mar 2021: greater control of strain and doping, than that currently. achievable87,88 when performing growth and transfer on full150 or 200 mm wafers.

23 Mar 2021: has EF 200 meV, as extracted from Raman experiments. Figure S3: ( ) in units of universal conductance G0 = e2/4h = 6.0810. ... 5 S, for EF=50 meV (red), 200 meV (black) and. 300 meV (blue).