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21 Nov 2018: The buildup of the occupation of the lower CB statewithin the same valley is delayed, but still displays a short timeconstant 200 fs at 77 K. ... These are exfoliatedwith Nitto Denko tape, then further exfoliated on apolydimethylsiloxane (PDMS) stamp for

8 Jun 2018: Ag (140 nm) Al (60 nm). Pyrex support (525 m). Al2O3 (200 nm). ... Al2O3 (200 nm)SOI Si device (20 m). Ag (140 nm) Al (60 nm).

23 May 2018: and (2) comparable to the time scale 150–200 fs needed to heat the optical phonon modes42–45, Te reaches a steady-state during the pulse, given by the following equation:.

9 Jul 2018: and (2) comparable to the time scale 150–200 fs needed to heat the optical phonon modes42–45, Te reaches a steady-state during the pulse, given by the following equation:.

2 Oct 2018: Photonic devices need to support ultra- large bandwidth operation, for example, 200 Tb s1 in a single fibre9 and >10 Tb s1 cm2 in integrated Si photonics chips10. ... From equations 7 and 8 we get. From equation 9, τ 10 fs, 100 fs and 300 fs correspond

5 Sep 2018: Scale bar: 200 µm. 1801599 (3 of 8). www.advancedsciencenews.com. 2018 WILEY-VCH Verlag GmbH & Co.

11 May 2018: Finally, the microdisks are undercut with potassiumhydroxide to form an air-clad whispering gallery mode (WGM)resonator.38 The microdisks sit on 200 μm Si Mesa pillars toprevent the tapered fiber ... The microdisk has aradius of 19 μm and sits on a 200