Search

10 Jun 2014: 1500 1525 1550 1575 1600 1625. -40. -20. 0. -600 -400 -200 0 200 400 600.

3 Feb 2014: 5. 6. 7. θ [rad]. m/D. κ T0. φ = 43o, t = 0.2 mmL = 200 mmL = 300 mmL = 400 mmL = 500 mm. ... Gentilini C. et al./ Physics Engineering 01 (2009) 000–000. 200 250 300 350 400 450 500.

10 Jun 2014: 0.0. 0.2. 0.4. 0.6. 0.8. 1.0. 0 50 100 150 200 250 300 3500. ... Commun. 4, 1987, (2013).7. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

6 Feb 2014: P. W. Fowler et al.3242. on February 6, 2014rspa.royalsocietypublishing.orgDownloaded from. (Tarnai & Gáspár 1983a) is 5185025.200. ... The edge length is 49833021.200, intermediate between the Kólya–Goldbergand Tarnai–Gáspár arrangements.

10 Jun 2014: Express 20, 25077 (2012).8. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

14 Mar 2014: W- 3XU). -0C. a)> 2ÚNU). cebs 1.3 1. 400 0 -400 -200 0 200 400z(nm). ... 400 -200 0 200z(nm). DBR. 2.0. C0 1.5E4)UCÇ 1.0a). 0.5ü=. I I ' I.

10 Jun 2014: Express21, 23261 (2013).10. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

6 Feb 2014: Math. 18, 169–200. (doi:10.4153/CJM-1966-021-8). Kavicky, S. 2004 Anatomy of an exhibition.

6 Feb 2014: Higher-Order Rigidity – What Is the Proper Definition. Discrete & Computational Geometry 11, 193–200.Connelly, R., Terrell, M., 1995.

4 Sep 2014: sweeping both top gates simultaneously at a drain-sourcevoltage VD = 200 mV. ... b) Electrical transfer characteristics of a 1L-MoS2 FET at biasvoltage VD = 200 mV.

4 Feb 2014: Bandgap engineering is usually attempted by patterning into graphene nanoribbons (GNRs) (24,11), but GNRs tend to have low mobilities (<200 cm2V1s1) (27) as a consequence of carrier scattering on disordered ... Although these inverters pave the way to

14 Mar 2014: organic vapor phase epitaxy (MOVPE, AIXTRON AIX 200/4) as described in [47]. ... The pump laser is coupled into a 200 µm fiber. Fig.

6 Mar 2014: 200 K. 230 K260 K. 1300120011001000. Raman Shift (cm-1. ). 30 T(b) (1,1). ... Vunit. l3B. 2B. γ 21. 2v. V1B 4.1 106 cm1. This value leads to W (kz) 104 cm1 at 30 T and 200 K,too small to explain the observed

14 Feb 2014: High performance bilayer-graphene terahertz detectors. Davide Spirito,1 Dominique Coquillat,2 Sergio L. De Bonis,1 Antonio Lombardo,3. Matteo Bruna,3 Andrea C. Ferrari,3 Vittorio Pellegrini,1,4 Alessandro Tredicucci,1. Wojciech Knap,2 and Miriam S.

5 Jun 2014: 7b. These aggregates having a height rangingfrom 60 to 200 nm and a width spanning from 0.6 to 2 mm, werefound to be randomly distributed within the polymer matrix.Their ... Experimental sectionMaterials. Poly(3-hexylthiophene) (P3HT) (Fig. 1b)

22 Aug 2014: Hasan, F. Wang, and A. C. Ferrari, "Sub 200 fs pulse generation from a graphene mode-locked fiber.

5 Mar 2014: In the 1,200–1,350 nm emission range, exciton-exciton resonances of SWNTs such as (13,2), (12,4), (10,5), (9,7), (10,6), (8,7), (11,4), ... 6.4a) with respect to other tubes. The strong PL emission in the 1,080–1,200 nm range.

5 Jun 2014: C.Sub 200 fs Pulse Generation from a Graphene Mode-Locked Fiber Laser.

15 Jul 2014: BRUNA ET AL. VOL. XXX ’ NO. XX ’ 000–000 ’ XXXX. www.acsnano.org. A. C XXXX American Chemical Society. Doping Dependence of the RamanSpectrum of Defected GrapheneMatteo Bruna, Anna K. Ott, Mari Ijäs, Duhee Yoon, Ugo Sassi, and Andrea C.

6 Oct 2014: Because the optical phonon energy in graphene is large45,46 (200  meV), hot carriers created by the radiation field can remain at a tempera-ture Te (and thus energy kBTe, with ... 100. –200. –300. –400. –500. Phot. ocur. rent. (nA. ). Gate