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1 - 10 of 20 search results for KaKaoTalk:vb20 200 |u:www-g.eng.cam.ac.uk where 0 match all words and 20 match some words.

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  2. STu1N.8.pdf CLEO:2014 © 2014 OSA Sub-50 fs compressed pulses ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/STu1N.8.pdf
    10 Jun 2014: 1500 1525 1550 1575 1600 1625. -40. -20. 0. -600 -400 -200 0 200 400 600.

  3. JTu4A.67.pdf CLEO:2014 © 2014 OSA Graphene saturable absorber power…

    www-g.eng.cam.ac.uk/nms/publications/pdf/JTu4A.67.pdf
    10 Jun 2014: 0.0. 0.2. 0.4. 0.6. 0.8. 1.0. 0 50 100 150 200 250 300 3500. ... Commun. 4, 1987, (2013).7. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

  4. Numerical analysis of morphing corrugated plates

    www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009Procedia.pdf
    3 Feb 2014: 5. 6. 7. θ [rad]. m/D. κ T0. φ = 43o, t = 0.2 mmL = 200 mmL = 300 mmL = 400 mmL = 500 mm. ... Gentilini C. et al./ Physics Engineering 01 (2009) 000–000. 200 250 300 350 400 450 500.

  5. STu1I.2.pdf CLEO:2014 © 2014 OSA Synchronously coupled fiber lasers…

    www-g.eng.cam.ac.uk/nms/publications/pdf/STu1I.2.pdf
    10 Jun 2014: Express 20, 25077 (2012).8. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

  6. Graphene saturable absorbers for VECSELs V. J. Wittwer*a, C. ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/89660X.pdf
    14 Mar 2014: W- 3XU). -0C. a)> 2ÚNU). cebs 1.3 1. 400 0 -400 -200 0 200 400z(nm). ... 400 -200 0 200z(nm). DBR. 2.0. C0 1.5E4)UCÇ 1.0a). 0.5ü=. I I ' I.

  7. STh3N.8.pdf CLEO:2014 © 2014 OSA Nanotube mode-locked, low repetition …

    www-g.eng.cam.ac.uk/nms/publications/pdf/STh3N.8.pdf
    10 Jun 2014: Express21, 23261 (2013).10. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

  8. nl400516a 1..6

    www-g.eng.cam.ac.uk/nms/publications/pdf/nl400516a.pdf
    4 Sep 2014: sweeping both top gates simultaneously at a drain-sourcevoltage VD = 200 mV. ... b) Electrical transfer characteristics of a 1L-MoS2 FET at biasvoltage VD = 200 mV.

  9. 1.1 Gigahertz Multi-Transistor Graphene Integrated Circuits

    www-g.eng.cam.ac.uk/nms/publications/pdf/06724538.pdf
    4 Feb 2014: Bandgap engineering is usually attempted by patterning into graphene nanoribbons (GNRs) (24,11), but GNRs tend to have low mobilities (<200 cm2V1s1) (27) as a consequence of carrier scattering on disordered ... Although these inverters pave the way to

  10. Graphene modelocked VECSELs C.A. Zaugg1*, V.J. Wittwer2, Z. Sun2, ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/896607.pdf
    14 Mar 2014: organic vapor phase epitaxy (MOVPE, AIXTRON AIX 200/4) as described in [47]. ... The pump laser is coupled into a 200 µm fiber. Fig.

  11. RAPID COMMUNICATIONS PHYSICAL REVIEW B 89, 121402(R) (2014) Effects…

    www-g.eng.cam.ac.uk/nms/publications/pdf/PhysRevB.89.121402.pdf
    6 Mar 2014: 200 K. 230 K260 K. 1300120011001000. Raman Shift (cm-1. ). 30 T(b) (1,1). ... Vunit. l3B. 2B. γ 21. 2v. V1B 4.1 106 cm1. This value leads to W (kz) 104 cm1 at 30 T and 200 K,too small to explain the observed

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