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20 Aug 2008: The resulting NWs have a relativelythick (5-10 nm) oxide shell surrounding a crystalline Si core10-20 nm in diameter.14 After synthesis, the SiNWs aremechanically transferred onto a 200 nm

27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device

5 Sep 2008: Concentration (µg ml–1). 1,000 1,200 1,400. γ = E sur – TSsursolsol. ... Distance (Å–1). Inte. nsity. (a.u. )In. tens. ity (a. u.). 200.

7 Jan 2008: Electron and Phonon Properties of Graphene:Their Relationship with Carbon Nanotubes. J.-C. Charlier1, P. C. Eklund2 J. Zhu2, A. C. Ferrari3. 1 Unité de Physico-Chimie et de Physique des MatériauxUniversité Catholique de Louvain1 Place Croix du

2 Jul 2008: 100. 200. 300. 400. A ta-C. GT1060 cm-1. 633nm. 514.5nm. 351nm. ... Gilkes et al. [16] This work. 200 300 400 500 600 700 800.

17 Jul 2008: Figure 4 shows the PL of the nanostructures for excita-tion at 200 nm. ... PL of each sample in the region 200–900 nm is displayed inFigure 4.

15 Aug 2008: By using an acousto-optic-modulator (AOM) at frequencies higher than 200 kHz, even better SNR could be achieved, but at the price of a reduced temporal resolution, due to

2 Oct 2008: 200 300 400 500 600 700 800 900Temperature (K). 100. 200. ... m-1. ). 0 50 100 150 200 250 300 350T (K).

20 Oct 2008: A mixture of69%Ar – 30%N2 – 1%CH4 in vol % is fed at a total flowrate of 200 SCCM SCCM denotes cubic centimeter perminute at STP from bottom of the reactor.

27 May 2008: exposing a H2 sputtered (at 580 1C, 1 h), 0.5-nm-thick Fe film to undilutedC2H2 (2107 mbar pressure) for 5 min at 580 1C (scale bar: 200 nm).