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1 - 10 of 10 search results for TALK:ZA31 24 / |u:www-g.eng.cam.ac.uk where 0 match all words and 10 match some words.

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  2. Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2

    www-g.eng.cam.ac.uk/nms/publications/pdf/ZWang2018a.pdf
    21 Nov 2018: We use a 24 24 1 k-grid tocalculate the BetheSalpeter kernel. ... The real-time simulation adoptsa coarse 24 24 1 and a denser 61 61 1 k-grid.

  3. Graphene Reflectarray Metasurface for Terahertz Beam Steering and…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Tamagone2018.pdf
    8 Jun 2018: Furthermore, highmobility of SLG allows mid infrared plasmon-polaritons,also tuneable by gating[24, 25]. ... From Eq. 22 we get:. γR =(RON ROFF)2(1 ω2τ2). 4 RON ROFF' 0.856 (24).

  4. Broadband, electrically tunable third-harmonic generation in graphene

    www-g.eng.cam.ac.uk/nms/publications/pdf/Soavi2018.pdf
    23 May 2018: Te = 1,000 K. Te = 300 K. THGE. –0.24 eV–0.39 eV–0.42 eV–0.44 eV–0.48 eV. ... 24. Saynatjoki, A. et al. Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers.

  5. Broadband, electrically tunable third-harmonic generation in graphene

    www-g.eng.cam.ac.uk/nms/publications/pdf/Soavi2018-Nanotech.pdf
    9 Jul 2018: Te = 1,000 K. Te = 300 K. THGE. –0.24 eV–0.39 eV–0.42 eV–0.44 eV–0.48 eV. ... 24. Saynatjoki, A. et al. Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers.

  6. Graphene-based integrated photonics for next-generation datacom and…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Romagnoli2018.pdf
    2 Oct 2018: Major sys-tem vendors and market forecasts estimate 28 billion connected devices by 2021 (ref.21) and 100 billion by 2025 (ref.24), with a market of up to tens of ... iσπ. Eω i τ. ( )=2. t+ 2. 4+ t. 24.

  7. Multi-Valley Superconductivity in Ion-Gated MoS2 Layers

    www-g.eng.cam.ac.uk/nms/publications/pdf/Piatti2018-3.pdf
    5 Sep 2018: When exfoliated frombulk to single layer (1L), they undergo an indirect-to-directgap transition,24 offering a platform for electronic andoptoelectronic applications,1,2,5 such as transistors,68 ... Electric-double-layer field-effecttransistors with ionic

  8. Electrically Controlled Nano and Micro Actuation in Memristive…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Kos2018.pdf
    5 Sep 2018: mechanical deformations in the underlying structure),[21] and impermeability to gases.[21] Raman spectroscopy is used to monitor the presence of defects,[22] doping,[23,24] and strain[25–28] (see ... KGaA, Weinheim. www.small-journal.com. Small 2018, 14

  9. Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Galy2018.pdf
    11 May 2018: B.; Turnbull, G. A. How torecognize lasing. Nat. Photonics 2009, 3, 546.(24) Purcell, E. ... Today 1989, 42, 24.(26) Auffev̀es, A.; Gerace, D.; Geŕard, J.-M.; Franca Santos, M.;Andreani, L.

  10. Raman spectroscopy of graphene under ultrafast laser excitation

    www-g.eng.cam.ac.uk/nms/publications/pdf/Ferrante2018.pdf
    2 Feb 2018: ps) to impulsively generate a strongly out-of-equilibriumdistributions of hot e–h pairs4,8,23,24. ... Phys. Rev. B80, 121403 (2009). 24. Breusing, M. et al. Ultrafast nonequilibrium carrier dynamics in a singlegraphene layer.

  11. Charge-tuneable biexciton complexes in monolayer WSe2

    www-g.eng.cam.ac.uk/nms/publications/pdf/Barbone2018.pdf
    3 Oct 2018: 24 observed a peak in 1L-molybdenumdiselenide (MoSe2) in the expected energy range, which theylabelled as the neutral biexciton. ... Graphite. hBN. WSe2. 1.728. 1.699. 1.6921.685. 1.679. 1.711. = 1. = 24 K.

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