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28 Nov 2006: RAPID COMMUNICATIONS. PHYSICAL REVIEW B 68, 241312R! 2003! Raman spectroscopy of silicon nanowires. ... g. of. i-l. es. nf-l. se. uC(0,q)u25 exp(2q2d2/16p 2).6 We approximate the Si TOdispersion as v(q) 5@ A1 B cos(qp/2)#

15 Jun 2015: R1 R þ R cos bR1 cosðp=nÞ. ) R1R2. pnb. sin btanðp=nÞþ 1 cos b. ... n2 bn=p. 1 cos b þðsin bÞ= tanðp=nÞ 1 (3). It is not possible to solve explicitly for n, so we specify n and cal-culate n for given

27 Oct 2009: 2cos(τ), i ) x, y (1). Cxy(τ) )a2. 2sin(τ) (2). Sx x A cos(t) B cos(2t) (3). ... Sy y A sin(t) B sin(2t) (4). Cxx [〈x(t) x(t τ)〉 A22 cos(τ) B22 cos(2τ)](5).

30 Oct 2009: Figure 3a). [b] Embedded graphene flake or graphite crystal within. the plastic substrate. ... p. 4. @V. @ cos uijk. 0. (3). where V is the interatomic potential function and uijk is the.

6 Jan 2017: d = 2R(1 sin α) 2b cos α. (1)The current latitudinal radius at the crease position is r, whichis equal to R cos α b sin α. ... 4(b)and r/r2 = cos α. An explicit expression for r2 in terms of dcan now be found by eliminating b between them:.

28 Nov 2006: ata-rf. ered-. ughrustr tos is. b-. C,. 6006 J. Appl. Phys., Vol. ... In ocaseuC(0,q)u25 exp(2q2d2/16p 2). We approximate the STO dispersion asv(q) 5@ A1 B cos(qp/2)# 0.51 D, with A5 1.7143 105 cm2

3 Feb 2014: From simple trigonometry, this leads tothe following expressions. jGxx j sin2 a; jGyy j cos2 a; jGxy j sin a cos a (1). ... a diameterwith end-points ðjSxx;jSxyÞ ðj sin2 a;j sin a cos aÞ and ðjSyy; jSxyÞ ð0; j sin a cos aÞ; see Fig.

20 Oct 2009: Horizontal dotted ar-rows represent defect scattering. PHYSICAL REVIEW B 80, 165413 2009. ... A2c. a = 2 x cos , b = a2 x2.

15 Jun 2016: bf = 2b cos α (1)cf = b sin α (2). ... initial mirror node B with themountain-valley assignment of the generic node B.

15 Oct 2009: Thusn can be writ-ten as. n5 12 d 2 i b, 6! ... 2 g, 19! Y a,b,g;E!5 j 1 sin2 g 1 j 2 cos.